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TK10A80W,S4X

TK10A80W,S4X
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Dalies numeris
TK10A80W,S4X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
9.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Pd - Power Dissipation
40 W
Product Type
MOSFET
Qg - Gate Charge
19 nC
Rds On - Drain-Source Resistance
460 mOhms
Rise Time
35 ns
Series
TK10A80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
120 ns
Typical Turn-On Delay Time
65 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Naujausios apžvalgos

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Teşekkürler
Quick delivery. Secure packing. Excellent product. Thank you
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Thank You all fine, packed very well
Daugiau

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