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TK10A60D(STA4,Q,M)

TK10A60D(STA4,Q,M)
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Dalies numeris
TK10A60D(STA4,Q,M)
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET MOSFET N-ch 600V 10A
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
1.5 s
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220SIS-3
Pd - Power Dissipation
45 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Rds On - Drain-Source Resistance
750 mOhms
Rise Time
22 ns
Series
TK10A60D
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Type
Field Effect Transistor Silicon N Channel MOS Type
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
55 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
2 V
Width
4.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Shipping a little 1 weeks, normal packing, the procedure is complete.
Works. Recommend
Daugiau

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Susiję raktiniai žodžiai TK10

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  • TK10A60D(STA4,Q,M) Techniniai duomenys

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