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SQ2362ES-T1_GE3

SQ2362ES-T1_GE3
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Dalies numeris
SQ2362ES-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Channel 60V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
18 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
4.3 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3 W
Product Type
MOSFET
Qg - Gate Charge
7.6 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
68 mOhms
Rise Time
20 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
14 ns
Typical Turn-On Delay Time
6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Quickly came to CET, all in one package. Look at the rules
The goods are OK, thank you dealers.
Great product. Arrived ahead of time. Thank you
Seems well have not tested
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Daugiau

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