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RQ3G100GNTB

RQ3G100GNTB
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Dalies numeris
RQ3G100GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Nch 40V 10A Power MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
3.2 ns
Id - Continuous Drain Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
8.4 nC
Rds On - Drain-Source Resistance
11 mOhms
Rise Time
4.2 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
23.1 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
all exactly and work. радиолюбителя useful set to, thank you)
packed pretty good, all is ok,-seller.
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
The goods are OK, thank you dealers.
Daugiau

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