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RQ3G150GNTB

RQ3G150GNTB
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Dalies numeris
RQ3G150GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Nch 40V 30Aw Si MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
16 S
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
20 W
Product Type
MOSFET
Qg - Gate Charge
24.1 nC
Rds On - Drain-Source Resistance
5.1 mOhms
Rise Time
6.4 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
62.1 ns
Typical Turn-On Delay Time
16.8 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Everything is fine!
Seems well have not tested
Looks good
Daugiau

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