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SQ3425EV-T1_GE3

SQ3425EV-T1_GE3
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Dalies numeris
SQ3425EV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
28 ns
Forward Transconductance - Min
9 S
Id - Continuous Drain Current
7.4 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
10.3 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
49 mOhms
Rise Time
26 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
41 ns
Typical Turn-On Delay Time
11 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.4 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
fast delivery, item as described, thanks!!
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Shipping a little 1 weeks, normal packing, the procedure is complete.
Daugiau

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