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TK10A80E,S4X

TK10A80E,S4X
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Dalies numeris
TK10A80E,S4X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Height
15 mm
Id - Continuous Drain Current
10 A
Length
10 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Pd - Power Dissipation
50 W
Product Type
MOSFET
Qg - Gate Charge
46 nC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
40 ns
Series
TK10A80E
Technology
SI
Tradename
MOSVIII
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
140 ns
Typical Turn-On Delay Time
80 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Width
4.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Daugiau

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