Dalies numeris RQ3E080BNTB Kategorijos MOSFET RoHS Duomenų lapas RQ3E080BNTB apibūdinimas MOSFET 4.5V Drive Nch MOSFET
Kategorijos MOSFET Configuration Single Fall Time 7 ns Id - Continuous Drain Current 8 A Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 14.5 nC Rds On - Drain-Source Resistance 11 mOhms Rise Time 20 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V