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RQ3E080GNTB

RQ3E080GNTB
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Dalies numeris
RQ3E080GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4.5V Drive Nch MOSFET
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
2.4 ns
Forward Transconductance - Min
7 s
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2 W
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
16.7 mOhms
Rise Time
3.6 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
17.3 ns
Typical Turn-On Delay Time
6.9 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
My package arrived wet, not know where occurs this fact, but working all right
Works. Find the price of this product is very good
The goods are OK, thank you dealers.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Daugiau

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