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RQ6E035ATTCR

RQ6E035ATTCR
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Dalies numeris
RQ6E035ATTCR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Pch -30V -3.5A Power MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
20 ns
Forward Transconductance - Min
3.2 S
Id - Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457-6
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
10 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
12 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Quick delivery. Secure packing. Excellent product. Thank you
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
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