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RQ6E030SPTR

RQ6E030SPTR
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Dalies numeris
RQ6E030SPTR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET PCH -30V -3A SMALL SIGNAL
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
12 ns
Id - Continuous Drain Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457T-6
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
6 nC
Rds On - Drain-Source Resistance
80 mOhms
Rise Time
13 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

„Porduct“ kategorija

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Decent quality, not минвелл certainly, but enough decent
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Seems well have not tested
I received the product right, thank you very much 2018/12/03 ★★★★★
Daugiau

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RQ6E030SPTR Naujienos

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