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TK100E10N1,S1X

TK100E10N1,S1X
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Dalies numeris
TK100E10N1,S1X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Height
15.1 mm
Id - Continuous Drain Current
207 A
Length
10.16 mm
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Reel
Packaging
Cut Tape
Product Type
MOSFET
Qg - Gate Charge
140 nC
Rds On - Drain-Source Resistance
3.4 mOhms
Series
TK100E10N1
Technology
SI
Tradename
U-MOSVIII-H
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Unit Weight
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
10 V
Width
4.45 mm

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