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TK17N65W,S1F

TK17N65W,S1F
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Dalies numeris
TK17N65W,S1F
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Power MOSFET N-Channel
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
20.95 mm
Id - Continuous Drain Current
17.3 A
Length
15.94 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
15 ns
Series
TK17N65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
5.02 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Seems well have not tested
and whole all right. the features no more функционалу check.
Product as shown in the description, excellent seller, I recommend this seller.
Daugiau

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Susiję raktiniai žodžiai TK17

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  • TK17N65W,S1F Specifikacija
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