Dalies numeris HN1A01FU-Y,LF Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas HN1A01FU-Y,LF apibūdinimas Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.1 V Continuous Collector Current - 150 mA DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Height 0.9 mm Length 2 mm Maximum DC Collector Current - 150 mA Mounting Style SMD/SMT Package / Case US-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series HN1A01 Technology SI Transistor Polarity PNP Unit Weight Width 1.25 mm