Dalies numeris SQ2319ADS-T1_GE3 Kategorijos MOSFET RoHS Duomenų lapas SQ2319ADS-T1_GE3 apibūdinimas MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 17 ns Forward Transconductance - Min 8 s Height 1.45 mm Id - Continuous Drain Current 4.6 A Length 2.9 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2.5 W Product Type MOSFET Qg - Gate Charge 10.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 75 mOhms Rise Time 18 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 17 ns Typical Turn-On Delay Time 4 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 1.6 mm