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RQ1E075XNTCR

RQ1E075XNTCR
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Dalies numeris
RQ1E075XNTCR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 4V DRIVE NCH MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Id - Continuous Drain Current
7.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
6.8 nC
Rds On - Drain-Source Resistance
17 mOhms
Rise Time
25 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
7 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Quick delivery. Secure packing. Excellent product. Thank you
all exactly and work. радиолюбителя useful set to, thank you)
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Daugiau

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