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RQ1E050RPTR

RQ1E050RPTR
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Dalies numeris
RQ1E050RPTR
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET RECOMMENDED ALT 755-RF4E075ATTCR
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Development Kit
-
Fall Time
50 ns
Forward Transconductance - Min
-
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
120 nC
Rds On - Drain-Source Resistance
31 mOhms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
4 V

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