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SQ3427AEEV-T1_GE3

SQ3427AEEV-T1_GE3
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Dalies numeris
SQ3427AEEV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
33 ns
Forward Transconductance - Min
9 S
Height
1.1 mm
Id - Continuous Drain Current
5.3 A
Length
3.05 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
15.3 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
95 mOhms
Rise Time
24 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
8 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
1.65 mm

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Naujausios apžvalgos

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Teşekkürler
Received, Fast shipping, not checked yet
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
High Quality driver, works excellent. It came to Moscow for 7 days.
Daugiau

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