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SQ3426AEEV-T1_GE3

SQ3426AEEV-T1_GE3
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Dalies numeris
SQ3426AEEV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
4 ns
Forward Transconductance - Min
21 S
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
14 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
32 mOhms
Rise Time
10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
7 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
fast delivery
Daugiau

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