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RQ3L090GNTB

RQ3L090GNTB
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Dalies numeris
RQ3L090GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET NCH 60V 30A POWER
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
14 ns
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
20 W
Product Type
MOSFET
Qg - Gate Charge
24.5 nC
Rds On - Drain-Source Resistance
13.9 mOhms
Rise Time
14 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
41 ns
Typical Turn-On Delay Time
16 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.3 V

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Naujausios apžvalgos

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Quick delivery. Secure packing. Excellent product. Thank you
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Goods came in two weeks. Well packed. Track number tracked
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
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