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RQ3L050GNTB

RQ3L050GNTB
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Dalies numeris
RQ3L050GNTB
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Nch 60V 12A Si MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
3.7 ns
Forward Transconductance - Min
3.5 s
Id - Continuous Drain Current
12 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
14.8 W
Product Type
MOSFET
Qg - Gate Charge
5.3 nC
Rds On - Drain-Source Resistance
43 mOhms
Rise Time
4.9 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
17.4 ns
Typical Turn-On Delay Time
7.4 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
My package arrived wet, not know where occurs this fact, but working all right
Quickly came to CET, all in one package. Look at the rules
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
Daugiau

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