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SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3
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Dalies numeris
SQ1922AEEH-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Dual Nch 20V Vds SOT-363
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
6 ns
Id - Continuous Drain Current
0.85 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
1.2 nC
Rds On - Drain-Source Resistance
300 mOhms
Rise Time
9.6 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
8 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Daugiau

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SQ1922AEEH-T1_GE3 Naujienos

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Susiję raktiniai žodžiai SQ19

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