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SQ1912EH-T1_GE3

SQ1912EH-T1_GE3
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Dalies numeris
SQ1912EH-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
17 ns, 17 ns
Forward Transconductance - Min
2.6 S, 2.6 S
Id - Continuous Drain Current
800 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
1.15 nC, 1.15 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
200 mOhms, 200 mOhms
Rise Time
21 ns, 21 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
19 ns, 19 ns
Typical Turn-On Delay Time
3 ns, 3 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
450 mV

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Goods came in two weeks. Well packed. Track number tracked
fast delivery
Fast shippng. Good quality. I recomend this seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
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