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SQ4961EY-T1_GE3

SQ4961EY-T1_GE3
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Dalies numeris
SQ4961EY-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
8 ns
Forward Transconductance - Min
9 S
Height
1.75 mm
Id - Continuous Drain Current
4.4 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.3 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
13 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
36 ns
Typical Turn-On Delay Time
11 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
goods very well received very good quality
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Takes 8 days to Japan. Good!
Yes, they are all here. :)
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Daugiau

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