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TK17E80W,S1X

TK17E80W,S1X
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Dalies numeris
TK17E80W,S1X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 800V 2050pF 32nC 17A 180W
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
7 ns
Id - Continuous Drain Current
17 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
180 W
Product Type
MOSFET
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
250 mOhms
Rise Time
24 ns
Series
TK17E80W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
58 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
packed pretty good, all is ok,-seller.
Goods came in two weeks. Well packed. Track number tracked
Fast shippng. Good quality. I recomend this seller.
Works. Recommend
the photo in comparison with cheap. Delivery fast
Daugiau

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Susiję raktiniai žodžiai TK17

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  • TK17E80W,S1X PDF
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  • TK17E80W,S1X Atsisiųsti PDF
  • TK17E80W,S1X Atsisiųsti duomenų lapą
  • TK17E80W,S1X Tiekimas
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  • TK17E80W,S1X Švinas nemokamai
  • TK17E80W,S1X Specifikacija
  • TK17E80W,S1X Karšti pasiūlymai
  • TK17E80W,S1X Pertraukos kaina
  • TK17E80W,S1X Techniniai duomenys

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