Dalies numeris SQ2337ES-T1_GE3 Kategorijos MOSFET RoHS Duomenų lapas SQ2337ES-T1_GE3 apibūdinimas MOSFET P-Channel 80V AEC-Q101 Qualified
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 3.5 s Height 1.45 mm Id - Continuous Drain Current 2.2 A Length 2.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3 W Product Type MOSFET Qg - Gate Charge 11.5 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 290 mOhms Rise Time 10 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 18 ns Typical Turn-On Delay Time 5 ns Unit Weight Vds - Drain-Source Breakdown Voltage 80 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 1.6 mm