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SQ3419EV-T1_GE3

SQ3419EV-T1_GE3
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Dalies numeris
SQ3419EV-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
31 ns
Forward Transconductance - Min
8 s
Id - Continuous Drain Current
6.9 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
11.3 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
48 mOhms
Rise Time
24 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
26 ns
Typical Turn-On Delay Time
8 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

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My package arrived wet, not know where occurs this fact, but working all right
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Quickly came to CET, all in one package. Look at the rules
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Daugiau

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SQ3419EV-T1_GE3 Naujienos

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