Dalies numeris SQ2398ES-T1_GE3 Kategorijos MOSFET RoHS Duomenų lapas SQ2398ES-T1_GE3 apibūdinimas MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 17 ns Forward Transconductance - Min 3 s Id - Continuous Drain Current 1.6 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 2.3 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 300 mOhms Rise Time 18 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 7 ns Typical Turn-On Delay Time 5 ns Unit Weight Vds - Drain-Source Breakdown Voltage 100 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 2.5 V