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SQ3427EV-T1_GE3

SQ3427EV-T1_GE3
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Dalies numeris
SQ3427EV-T1_GE3
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
33 ns
Forward Transconductance - Min
9 S
Height
1.1 mm
Id - Continuous Drain Current
5.3 A
Length
3.05 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TSOP-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
5 W
Product Type
MOSFET
Qg - Gate Charge
15.3 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
95 mOhms
Rise Time
24 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
8 ns
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Width
1.65 mm

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Naujausios apžvalgos

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Yes, they are all here. :)
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Works. Recommend
the photo in comparison with cheap. Delivery fast
Everything is fine!
Daugiau

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