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TK10P60W,RVQ

TK10P60W,RVQ
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Dalies numeris
TK10P60W,RVQ
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
2.3 mm
Id - Continuous Drain Current
9.7 A
Length
6.5 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
80 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
22 ns
Series
TK10P60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5.5 mm

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everything as it is written in the description of the same deductible prodovtsu deserved
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
all exactly and work. радиолюбителя useful set to, thank you)
Everything as it is written in the description of the same deductible prodovtsu deserved 5
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Žmonės žiūri TK10P60W,RVQ tada nusipirko

TK1005800000G
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TK100A06N1,S4X
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TK100A08N1,S4X
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