Dalies numeris TK10A60W,S4VX Kategorijos MOSFET RoHS Duomenų lapas TK10A60W,S4VX apibūdinimas MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 5.5 ns Height 15 mm Id - Continuous Drain Current 9.7 A Length 10 mm Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Pd - Power Dissipation 30 W Product Type MOSFET Qg - Gate Charge 20 nC Rds On - Drain-Source Resistance 327 mOhms Rise Time 22 ns Series TK10A60W Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 45 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3.7 V Width 4.5 mm