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SQ4431EY-T1_GE3

SQ4431EY-T1_GE3
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Dalies numeris
SQ4431EY-T1_GE3
Kategorijos
MOSFET
RoHS
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apibūdinimas
MOSFET 30V 10.8A 6W AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
25 s
Height
1.75 mm
Id - Continuous Drain Current
10.8 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
6 W
Product Type
MOSFET
Qg - Gate Charge
25 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
22 mOhms
Rise Time
12 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

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Naujausios apžvalgos

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fast delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Daugiau

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