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TK100L60W,VQ

TK100L60W,VQ
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Dalies numeris
TK100L60W,VQ
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF
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Specifikacijos

Kategorijos
MOSFET
Configuration
Single
Fall Time
125 ns
Height
26 mm
Id - Continuous Drain Current
100 A
Length
20 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PL-3
Pd - Power Dissipation
797 W
Product Type
MOSFET
Qg - Gate Charge
360 nC
Rds On - Drain-Source Resistance
15 mOhms
Rise Time
130 ns
Series
TK100L60
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
690 ns
Typical Turn-On Delay Time
230 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
5 mm

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Naujausios apžvalgos

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Quick delivery. Secure packing. Excellent product. Thank you
Quickly came to CET, all in one package. Look at the rules
Everything is excellent! recommend this seller!
Decent quality, not минвелл certainly, but enough decent
Goods came in two weeks. Well packed. Track number tracked
Daugiau

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TK1005800000G
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TK100L60W,VQ Naujienos

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