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SQ4435EY-T1_GE3

SQ4435EY-T1_GE3
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Dalies numeris
SQ4435EY-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET P-Channel 30V AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Forward Transconductance - Min
22 S
Height
1.75 mm
Id - Continuous Drain Current
15 A
Length
4.9 mm
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
6.8 W
Product Type
MOSFET
Qg - Gate Charge
58 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
13 mOhms
Rise Time
9 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
45.3 ns
Typical Turn-On Delay Time
12.5 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
3.9 mm

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Naujausios apžvalgos

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Everything as it is written in the description of the same deductible prodovtsu deserved 5
fast delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
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Susiję raktiniai žodžiai SQ44

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  • SQ4435EY-T1_GE3 Specifikacija
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