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TK17E65W,S1X

TK17E65W,S1X
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Dalies numeris
TK17E65W,S1X
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Power MOSFET N-Channel
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
6 ns
Height
15.1 mm
Id - Continuous Drain Current
17.3 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
MOSFET
Qg - Gate Charge
45 nC
Rds On - Drain-Source Resistance
170 mOhms
Rise Time
15 ns
Series
TK17E65W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Width
4.45 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Quick delivery. Secure packing. Excellent product. Thank you
it is safe and sound all, thank you seller!
packed pretty good, all is ok,-seller.
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Daugiau

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TK17E65W,S1X Naujienos

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Susiję raktiniai žodžiai TK17

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  • TK17E65W,S1X Švinas nemokamai
  • TK17E65W,S1X Specifikacija
  • TK17E65W,S1X Karšti pasiūlymai
  • TK17E65W,S1X Pertraukos kaina
  • TK17E65W,S1X Techniniai duomenys

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