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TK10E60W,S1VX

TK10E60W,S1VX
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Dalies numeris
TK10E60W,S1VX
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
5.5 ns
Height
15.1 mm
Id - Continuous Drain Current
9.7 A
Length
10.16 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220-3
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
380 mOhms
Rise Time
22 ns
Series
TK10E60W
Technology
SI
Tradename
DTMOSIV
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3.7 V
Width
4.45 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
fast delivery
Works. Recommend
Long Service and Russia!
Seems well have not tested
Daugiau

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Susiję raktiniai žodžiai TK10

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