Dalies numeris TK10J80E,S1E Kategorijos MOSFET RoHS Duomenų lapas TK10J80E,S1E apibūdinimas MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 35 ns Height 20 mm Id - Continuous Drain Current 10 A Length 15.5 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Pd - Power Dissipation 250 W Product Type MOSFET Qg - Gate Charge 46 nC Rds On - Drain-Source Resistance 700 mOhms Rise Time 40 ns Series TK10J80E Technology SI Tradename MOSVIII Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 140 ns Typical Turn-On Delay Time 80 ns Unit Weight Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 4 V Width 4.5 mm