Dalies numeris SQ4483BEEY-T1_GE3 Kategorijos MOSFET RoHS Duomenų lapas SQ4483BEEY-T1_GE3 apibūdinimas MOSFET P-Channel 30V AEC-Q101 Qualified
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 178 us Forward Transconductance - Min 32 s Id - Continuous Drain Current 22 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Reel Pd - Power Dissipation 7 W Product Type MOSFET Qg - Gate Charge 113 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 7 mOhms Rise Time 82 us Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 134 us Typical Turn-On Delay Time 38 us Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V