Dalies numeris HN1B01F-Y(TE85L,F) Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas HN1B01F-Y(TE85L,F) apibūdinimas Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.1 V Configuration Dual DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current 150 mA Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SM-6 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 300 mW Product Type BJTs - Bipolar Transistors Series HN1B01 Technology SI Transistor Polarity PNP