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HN1B01FDW1T1G

HN1B01FDW1T1G
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
- 0.15 V
Configuration
Dual
Continuous Collector Current
0.2 A
DC Collector/Base Gain hfe Min
200
Emitter- Base Voltage VEBO
7 V
Height
0.94 mm
Length
3 mm
Maximum DC Collector Current
0.2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SC-74-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
380 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B01FDW1
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight
Width
1.5 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Daugiau

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Žmonės žiūri HN1B01FDW1T1G tada nusipirko

HN1B01F-GR(TE85L,F
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HN1B01F-Y(TE85L,F)
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HN1B01FDW1T1G Naujienos

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