HN1B01FU-GR,LF

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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V, - 50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
150 MHz, 120 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B01
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight

Naujausios apžvalgos

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Hello! Order received, very happy. Thank you very much!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Everything is fine!

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