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HN1C01FU-Y,LF

HN1C01FU-Y,LF
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Dalies numeris
HN1C01FU-Y,LF
Kategorijos
Bipolar Transistors - BJT
RoHS
Duomenų lapas
apibūdinimas
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package
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Specifikacijos

Kategorijos
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
US-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C01
Technology
SI
Transistor Polarity
NPN

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
Teşekkürler
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Daugiau

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Susiję raktiniai žodžiai HN1C

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