Dalies numeris HN1C03FU-A(TE85L,F Kategorijos Bipolar Transistors - BJT RoHS Duomenų lapas HN1C03FU-A(TE85L,F apibūdinimas Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Kategorijos Bipolar Transistors - BJT Collector- Base Voltage VCBO 50 V Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Saturation Voltage 0.042 V Configuration Single Continuous Collector Current 300 mA DC Collector/Base Gain hfe Min 200 DC Current Gain hFE Max 1200 Emitter- Base Voltage VEBO 20 V Gain Bandwidth Product fT 30 MHz Maximum DC Collector Current 300 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case SMT-6 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series HN1C03 Technology SI Transistor Polarity NPN