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RQ6E080AJTCR

RQ6E080AJTCR
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Dalies numeris
RQ6E080AJTCR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET NCH 30V 8A POWER
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
22 ns
Id - Continuous Drain Current
8 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457T-6
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
16.2 nC
Rds On - Drain-Source Resistance
16.5 mOhms
Rise Time
16 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
65 ns
Typical Turn-On Delay Time
20 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
500 mV

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Perfectly.
Fast shippng. Good quality. I recomend this seller.
The goods are OK, thank you dealers.
Daugiau

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