Dalies numeris RQ3E110AJTB Kategorijos MOSFET RoHS Duomenų lapas RQ3E110AJTB apibūdinimas MOSFET NCH 30V 24A POWER
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 20 ns Id - Continuous Drain Current 24 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 15 W Product Type MOSFET Qg - Gate Charge 13.5 nC Rds On - Drain-Source Resistance 11.7 mOhms Rise Time 21 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 54 ns Typical Turn-On Delay Time 21 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 500 mV