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RQ6E085BNTCR

RQ6E085BNTCR
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Dalies numeris
RQ6E085BNTCR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Nch 30V 8.5A Si MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
31 ns
Forward Transconductance - Min
8 s
Id - Continuous Drain Current
8.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
32.7 nC
Rds On - Drain-Source Resistance
11.1 mOhms
Rise Time
16 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
11 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Works. Find the price of this product is very good
Decent quality, not минвелл certainly, but enough decent
fast delivery
Daugiau

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