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SQ1922EEH-T1_GE3

SQ1922EEH-T1_GE3
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Dalies numeris
SQ1922EEH-T1_GE3
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
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Specifikacijos

Kategorijos
MOSFET
Configuration
Dual
Fall Time
6 ns
Id - Continuous Drain Current
840 mA
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
SC-70-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
700 pC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
350 mOhms
Rise Time
12 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
20 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
all exactly and work. радиолюбителя useful set to, thank you)
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
The timer is running. 10 PCS. Packed properly.
Daugiau

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SQ1922EEH-T1_GE3 Naujienos

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