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RQ6E050ATTCR

RQ6E050ATTCR
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Dalies numeris
RQ6E050ATTCR
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET Pch -30V -5A Power MOSFET
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
22 ns
Id - Continuous Drain Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SOT-457-6
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.25 W
Product Type
MOSFET
Qg - Gate Charge
20.8 nC
Rds On - Drain-Source Resistance
38 mOhms
Rise Time
16 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
9.6 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Naujausios apžvalgos

Parašykite savo atgaivinimą
My package arrived wet, not know where occurs this fact, but working all right
Quickly came to CET, all in one package. Look at the rules
Takes 8 days to Japan. Good!
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
Daugiau

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