Dalies numeris TP0604N3-G Kategorijos MOSFET RoHS Duomenų lapas TP0604N3-G apibūdinimas MOSFET 40V 2 Ohm
Kategorijos MOSFET Channel Mode Enhancement Configuration Single Fall Time 6 ns Forward Transconductance - Min 400 ms Height 5.33 mm Id - Continuous Drain Current 430 mA Length 5.21 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-92-3 Packaging Bulk Pd - Power Dissipation 0.74 W Product Type MOSFET Rds On - Drain-Source Resistance 2 Ohms Rise Time 7 ns Technology SI Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 5 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 10 V Vgs th - Gate-Source Threshold Voltage 1 V Width 4.19 mm