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TP0606N3-G

TP0606N3-G
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Dalies numeris
TP0606N3-G
Kategorijos
MOSFET
RoHS
Duomenų lapas
apibūdinimas
MOSFET 60V 3.5Ohm
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Specifikacijos

Kategorijos
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
300 ms
Height
5.33 mm
Id - Continuous Drain Current
320 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
3.5 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Type
FET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1 V
Width
4.19 mm

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Naujausios apžvalgos

Parašykite savo atgaivinimą
Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
everything as it is written in the description of the same deductible prodovtsu deserved
it is safe and sound all, thank you seller!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Daugiau

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TP0606N3-G Naujienos

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